EE 2203 Electronic Devices and Circuits question paper download


 Third SemesterElectrical and Electronics Engineering 
EE2203 - ELECTRONIC DEVICES AND CIRCUITS(Regulation 2008)
 Time: Three hours Maximum: 100 Marks
 Answer ALL Questions 
PART A - (10 × 2 = 20 Marks)
 1. What is meant by diffusion current in a semi-conductor?
 2. A silicon diode has a saturation current of 7.5 pA at room temperature to 300 ° K.Calculate the saturation current at 400 ° K. 
3. Draw the input and output characteristics of a transistor in CE configurationand mark the cutoff, saturation and active regions. 
4. State the Advantages of optocouplers. (Write any four). 
5. Compare with JFET BJT
.6. Define the amplification factor in the JFET. 
7. Define CMRR and write its significance in the differential amplifiers. 
8. List the Advantages of negative feedback amplifiers
.9. Sketch of the idealized characteristics for the filter types.(A) Low Pass(B) high pass(C) band-pass(D) Band reject filters. 
10. Define intrinsic stand off ratio of UJT and draw its equivalent circuit. 
PART B - (5 × 16 = 80 Marks)
 11. (A) With a neat diagram explain the working of a PN junction diode inforward bias and reverse bias and show the effect of temperature on itsV-I characteristics. (16)Or
 (B) (i) Explain VI characteristics of the zener diode. (8)
 (Ii) Draw the circuit diagram and explain the working of full wavebridge rectifier and derived the expression for average outputcurrent and rectification efficiency. (8) 
12. (A) (i) Draw the h-parameter equivalent circuit of a transistor in the CEconfiguration. (8) 
(Ii) Describe the methods of determination of h-parameters from itsInput and output static characteristics. (8)Or
 (B) (i) Explain the important characteristics of the optocoupler. 
 (6)(Ii) Explain with neat sketch the switching characteristics of transistors.(10) 
13.  (A) (i) Explain how the transconductance of a JFET drain Varies withcurrent and gate voltage transfer characteristics andcharacteristics.  
(12)(Ii) has the following, the parameters A JFET IDDS = 32 mA,VGS (off) = -8 Volts, VGS = -4.5 Volts. Find the values ​​of the draincurrent. (4)Or 
(B) (i) Explain the working of the n-channel enhancement type MOSFET.Sketch its typical characteristics. (10) 
(Ii) Explain the application of the FET as a voltage variable resistor. (6) 
14. (A) (i) Draw the block diagram of a voltage series feedback amplifier andderived the equation for the input impedance, output impedance and thevoltage gain. (10) 
(Ii) Calculate the voltage gain, input and output resistances of a voltageseries feedback amplifier having a AV = 300, Ri = 1.5 k, 50 k Ro =and β = 1/15.  (6) Or 
(B) (i) with differentiat oscillator amplifier. (4)
 (Ii) Draw the circuit of a Hartley oscillator and derived the condition forthe frequency of oscillation. (12) 
15. (A) (i) Describe the operation characteristics of UJT and its emitter.  (8) 
(Ii) Describe the working of a Schmitt trigger circuit with the help ofNecessary waveforms.  (8) 
Or 
(B) (i) Sketch of the response of the RC high-pass filter inputs for the following,and explain.(1) Ramp(2) pulse.  (8) 
(Ii) Explain the operation of a bistable multi-vibrator circuit with neatsketch. (8)
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