PH9168 PHYSICS FOR COMMUNICATION ENGINEERING
(Common to Electronics and Communication Engg., Computer Science and Engg.
and Information Technology)
L T P C
3 0 0 3
OBJECTIVE:
To introduce the essential principles of physics for communication and related
engineering applications.
UNIT I ELECTRICAL PROPERTIES OF METALS 9
Classical theory: Drude model - thermal conductivity, thermal resistance - electrical
conductivity of nonmetals: semiconductors, ionic crystals and glasses - thin metal films:
conductivity and resistivity - Schrödinger wave equation – particle in a box – degenerate
states – Fermi-Dirac statistics – density of states: electron concentration and Fermi
Level - band theory of solids: energy band formation – electron effective mass.
UNIT II SEMICONDUCTORS 9
Intrinsic semiconductors: energy band-diagram - direct and indirect band gap
semiconductors - carrier concentrations and conductivity - extrinsic semiconductors: n,
p-type doping, compensation doping - temperature dependence of conductivity -
degenerate and nondegenerate semiconductors - recombination and minority carrier
injection: direct and indirect recombination - minority carrier lifetime - diffusion and
conduction equations and random motion - continuity equation: time-dependent
continuity equation, steady-state continuity equation - optical absorption - Hall effect and
devices - Ohmic contacts - Schottky diode and solar cell.
UNIT III DISPLAY DEVICES 9
Photoluminescence, cathodoluminescence, electroluminescence, injection luminescence
– plasma displays - LED construction and working – organic LEDs – principles of 19
quantum well laser – liquid crystals and LCD construction and working – numeric
displays
UNIT IV MAGNETIC/OPTICAL DATA STORAGE TECHNIQUES 9
Introduction – magnetic material parameters – magnetic disk memories – optical data
storage – phase change recording – magneto-optical data storage – Hi-tech involved in
system development – capacity of CD in normal use – advantages of CD – holographic
storage – construction of a hologram – reconstruction of a hologram – photorefractive
storage.
UNIT V FABRICATION PROCESS USING SEMICONDUCTORS AND
DIELECTRIC 9
Bulk crystal growth, Epitaxial growth, masking and etching, Diffusion of impurities,
selective diffusion, Formation of PN junction, resistors, capacitors, inductors, Isolation
methods, metal semiconductor contact. Introduction to integrated circuit – Definition of
LSI, MSI, VLSI circuits monolithic and hybrid circuits, Thin film and thick film technology.
TOTAL : 45 PERIODS
TEXT BOOKS
1. Palanisamy, P.K., Materials Science for Electronics Engineers, SCITECH, 2005.
2. Arumugam, M., Materials Science, Anirutha Publ., 2002.
REFERENCES
1. Jasprit Singh, Optoelectronics: An introduction to Materials and Devices, McGraw
Hill, 1998.
2. Wilson, J and Hawkes, J.F.B, Optoelectronics, Printice Hall, 2002
3. Bhattacharya, B., Semiconductor optoelectronic devices, Printice Hall of India, 1995.
4. Kittel, C., Introduction to Solid State Physics, John Wiley, 1996
5. Kasap, S.O. Principles of Electronic Materials and Devices, Tata McGraw-Hill, 2007
(Common to Electronics and Communication Engg., Computer Science and Engg.
and Information Technology)
L T P C
3 0 0 3
OBJECTIVE:
To introduce the essential principles of physics for communication and related
engineering applications.
UNIT I ELECTRICAL PROPERTIES OF METALS 9
Classical theory: Drude model - thermal conductivity, thermal resistance - electrical
conductivity of nonmetals: semiconductors, ionic crystals and glasses - thin metal films:
conductivity and resistivity - Schrödinger wave equation – particle in a box – degenerate
states – Fermi-Dirac statistics – density of states: electron concentration and Fermi
Level - band theory of solids: energy band formation – electron effective mass.
UNIT II SEMICONDUCTORS 9
Intrinsic semiconductors: energy band-diagram - direct and indirect band gap
semiconductors - carrier concentrations and conductivity - extrinsic semiconductors: n,
p-type doping, compensation doping - temperature dependence of conductivity -
degenerate and nondegenerate semiconductors - recombination and minority carrier
injection: direct and indirect recombination - minority carrier lifetime - diffusion and
conduction equations and random motion - continuity equation: time-dependent
continuity equation, steady-state continuity equation - optical absorption - Hall effect and
devices - Ohmic contacts - Schottky diode and solar cell.
UNIT III DISPLAY DEVICES 9
Photoluminescence, cathodoluminescence, electroluminescence, injection luminescence
– plasma displays - LED construction and working – organic LEDs – principles of 19
quantum well laser – liquid crystals and LCD construction and working – numeric
displays
UNIT IV MAGNETIC/OPTICAL DATA STORAGE TECHNIQUES 9
Introduction – magnetic material parameters – magnetic disk memories – optical data
storage – phase change recording – magneto-optical data storage – Hi-tech involved in
system development – capacity of CD in normal use – advantages of CD – holographic
storage – construction of a hologram – reconstruction of a hologram – photorefractive
storage.
UNIT V FABRICATION PROCESS USING SEMICONDUCTORS AND
DIELECTRIC 9
Bulk crystal growth, Epitaxial growth, masking and etching, Diffusion of impurities,
selective diffusion, Formation of PN junction, resistors, capacitors, inductors, Isolation
methods, metal semiconductor contact. Introduction to integrated circuit – Definition of
LSI, MSI, VLSI circuits monolithic and hybrid circuits, Thin film and thick film technology.
TOTAL : 45 PERIODS
TEXT BOOKS
1. Palanisamy, P.K., Materials Science for Electronics Engineers, SCITECH, 2005.
2. Arumugam, M., Materials Science, Anirutha Publ., 2002.
REFERENCES
1. Jasprit Singh, Optoelectronics: An introduction to Materials and Devices, McGraw
Hill, 1998.
2. Wilson, J and Hawkes, J.F.B, Optoelectronics, Printice Hall, 2002
3. Bhattacharya, B., Semiconductor optoelectronic devices, Printice Hall of India, 1995.
4. Kittel, C., Introduction to Solid State Physics, John Wiley, 1996
5. Kasap, S.O. Principles of Electronic Materials and Devices, Tata McGraw-Hill, 2007
{ 0 comments... read them below or add one }
Post a Comment
Enter your comments here