EC 9151 ELECTRON DEVICES L T P C
3 0 0 3
UNIT I SEMICONDUCTOR DIODE 9
PN junction, current equations, Diffusion and drift current densities, VI Characteristics,
Forward and Reverse Characteristics, Switching Times.
UNIT II BIPOLAR JUNCTION TRANSISTOR 9
NPN-PNP-Junctions-Current Early-effect equations - Input and Output Characteristics
of CE, CB CC-Hybrid-pi model h-parameter model - Eber-Moll Model Power BJT
Gummel Poon model.
UNIT III FIELD EFFECT Transistors 9
JFETs - Drain and Transfer Characteristics, pinch-off voltage-current equations and STIs
MOSFET-characteristic-DMOSFET significance, EMOSFET-, current-modelparameters equation - Modifications by ion implantation threshold voltage, channel length
modulation.-power MOSFET.
UNIT IV SPECIAL SEMICONDUCTOR DEVICES 9
Metal-Semiconductor Junction-Schottky barrier diodes, Zener diodes, diode Varacter -
Tunnel Diode-Gallium Arsenic devices, laser diodes, LDR, and MESFETs
UNIT V POWER DEVICES AND DISPLAY DEVICES 9
UJT, SCR, Diac, Triac, DMOS, VMOS, FINFET, DUALGATE, MOSFET, LED, LCD, Photo
transistor, Opto Coupler, Solar cell, CCD, Multi Emitter Transistor.
TOTAL: 45 Periods
TEXT BOOKS
1. Donald A Neaman, "Semiconductor Physics and Devices", Third Edition, Tata Mc
GrawHill Inc.. , 2007.
2 .. Streetman, "Solid State Electronic Devices", Fifth Edition, Prentice Hall of India-2004
REFERENCES
1. B.JAYANT Dung "Power Semiconductor Devices"-THOMPSON-1996
2. Donal H.TAUB SCHILLING "Digital Integrated Electronics" Mcgrawhill-2006
3. Yang, "Fundamentals of Semiconductor Devices", McGraw Hill International Edition,
1,968
3 0 0 3
UNIT I SEMICONDUCTOR DIODE 9
PN junction, current equations, Diffusion and drift current densities, VI Characteristics,
Forward and Reverse Characteristics, Switching Times.
UNIT II BIPOLAR JUNCTION TRANSISTOR 9
NPN-PNP-Junctions-Current Early-effect equations - Input and Output Characteristics
of CE, CB CC-Hybrid-pi model h-parameter model - Eber-Moll Model Power BJT
Gummel Poon model.
UNIT III FIELD EFFECT Transistors 9
JFETs - Drain and Transfer Characteristics, pinch-off voltage-current equations and STIs
MOSFET-characteristic-DMOSFET significance, EMOSFET-, current-modelparameters equation - Modifications by ion implantation threshold voltage, channel length
modulation.-power MOSFET.
UNIT IV SPECIAL SEMICONDUCTOR DEVICES 9
Metal-Semiconductor Junction-Schottky barrier diodes, Zener diodes, diode Varacter -
Tunnel Diode-Gallium Arsenic devices, laser diodes, LDR, and MESFETs
UNIT V POWER DEVICES AND DISPLAY DEVICES 9
UJT, SCR, Diac, Triac, DMOS, VMOS, FINFET, DUALGATE, MOSFET, LED, LCD, Photo
transistor, Opto Coupler, Solar cell, CCD, Multi Emitter Transistor.
TOTAL: 45 Periods
TEXT BOOKS
1. Donald A Neaman, "Semiconductor Physics and Devices", Third Edition, Tata Mc
GrawHill Inc.. , 2007.
2 .. Streetman, "Solid State Electronic Devices", Fifth Edition, Prentice Hall of India-2004
REFERENCES
1. B.JAYANT Dung "Power Semiconductor Devices"-THOMPSON-1996
2. Donal H.TAUB SCHILLING "Digital Integrated Electronics" Mcgrawhill-2006
3. Yang, "Fundamentals of Semiconductor Devices", McGraw Hill International Edition,
1,968
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